Samsung to produce 2 GB DDR3 on mass scale
World’s largest computer memory chipmaker, Samsung Electronics announced its plan to begin mass production of its latest and fastest chip model from next month. The company will start manufacturing the 2 GB DDR3 Dynamic Random Access Memory (DRAM) or chip for personal computers and other electronic devices such as mobile phones from next month.
The device is guaranteed to have 60% higher productivity than DDR2 devices as the 50nm class circuit technology has been used in making this. The 2GB DDR3 chips are claimed to be energy-efficient and supposedly reduces power consumption by at least 40% and therefore are very useful for next generation desktops and notebooks. Besides, the 2GB DDR3 chips reportedly enable use of up to 16GB RIMMs (Registered In-line Memory Modules).
The device is guaranteed to have 60% higher productivity than DDR2 devices as the 50nm class circuit technology has been used in making this. The 2GB DDR3 chips are claimed to be energy-efficient and supposedly reduces power consumption by at least 40% and therefore are very useful for next generation desktops and notebooks. Besides, the 2GB DDR3 chips reportedly enable use of up to 16GB RIMMs (Registered In-line Memory Modules).
The 2Gb device supports a data rate of up to 1.3Gbps at 1.5v or 1.35V, which is almost 1.6-times faster as compared to 800Mb/sec for a 1Gb dual-die package or DDR2 DRAM model. Samsung reportedly proclaimed that the 50nm-class process, which is used to manufacture the 2Gb DDR3 is expected to become the company’s primary DRAM process technology next year.
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